分析手法
We provide two-dimensional nanoscale electrical properties measurement and imaging. Advanced electrical characterization technology and research into next generation semiconductor production equipment are our focus.
分析案例
Advanced analysis of devices including solar cells, CMOS sensor, logic/power devices and other third generation of semiconductor materials such as GaN & SiC are provided.
技术研发
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分析手法
分析案例
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【概要】FIB的全称是聚焦离子束(Focused Ion Beam)，是一种基于高能离子束的纳米级加工与分析技术。其主要功能包括定点切割，材料蒸镀，蚀刻等。我司针对低阶（铜制程、铝制程）、高阶制程均有相应的测试方案。
FIB 的工作原理是将液态金属离子源（以镓Ga作为离子源材料较为普遍）产生的离子束经过加速，以极高的精度聚焦到样品表面；通过控制电场和磁场，可以使离子束在样品表面上精准移动，产生二次电子信号获取电子像，或用强电流离子束对表面原子进行剥离，以完成微、纳米级表面形貌加工。
TEM样品制备示例：
